STRESS MODIFICATION AND CHARACTERIZATION OF THIN SIC FILMS GROWN BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：10

作者：

SCHLIWINSKI, HJ ^{[1
]}

PELKA, M ^{[1
]}

BUCHMANN, LM ^{[1
]}

WINDBRACKE, W ^{[1
]}

LANGE, P ^{[1
]}

CSEPREGI, L ^{[1
]}

机构：

[1] FRAUNHOFER INST FESTKORPERTECHNOL,W-8000 MUNICH 60,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 11卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(92)90194-E

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin layers of hydrogenated amorphous SiC alloys were fabricated in a plasma-enhanced chemical vapour deposition process. The adjustment of the total stress in the layer was successfully carried out by employment of H+ ion implantation and annealing methods. To obtain results for bond changes with post-deposition treatments, the thin films have been investigated by means of IR absorption spectroscopy.

引用

页码：73 / 77

页数：5

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