Filled- and empty-state imaging of (2 x 4) reconstructed InP(001) surfaces with STM

被引：9

作者：

Guo, Q

Pemble, ME

Williams, EM

机构：

[1] Univ Salford, Dept Chem, Salford M5 4WT, Lancs, England

[2] Univ Liverpool, Surface Sci Res Ctr, Liverpool L69 3BX, Merseyside, England

来源：

SURFACE SCIENCE | 1999年 / 433卷

基金：

英国工程与自然科学研究理事会;

关键词：

scanning tunnelling microscopy; semiconductor surfaces;

D O I：

10.1016/S0039-6028(99)00121-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

InP(001) surfaces prepared by sputter-annealing and by annealing in a P-2 atmosphere have been studied using scanning tunnelling microscopy (STM). Annealing a phosphorus-rich (2 x 1) surface to above 600 K leads to the formation of the (2 x 4) surface. The filled- and empty-state STM images obtained fi om large areas with ordered (2 x 4) reconstruction are consistent with a two phosphorus dimer-two missing dimer model. The transition from (2 x 1) to (2 x 4) reconstruction proceeds through an intermediate stage where local regions showing mixed (2 x 4)/(2 x 2) forms are observed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：410 / 414

页数：5

共 13 条

[1] THERMAL-STABILITY OF SULFUR PASSIVATED INP(100)-(1X1) [J].