Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots

被引：57

作者：

Urayama, J ^{[1
]}

Norris, TB

Jiang, H

Singh, J

Bhattacharya, P

机构：

[1] Univ Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.1462860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measured the transient temperature-dependent carrier population in the confined states of self-assembled In0.4Ga0.6As quantum dots as well as those of the surrounding wetting layer and barrier region using differential transmission spectroscopy. Results show directly that thermal reemission and nonradiative recombination contribute significantly to the dynamics above 100 K. We offer results of an ensemble Monte Carlo simulation to explain the contribution of these thermally activated processes. (C) 2002 American Institute of Physics.

引用

页码：2162 / 2164

页数：3

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