Spin-transfer switching in MgO-based magnetic tunnel junctions (invited)

被引：42

作者：

Diao, Zhitao ^{[1
]}

Pakala, Mahendra ^{[1
]}

Panchula, Alex ^{[1
]}

Ding, Yunfei ^{[1
]}

Apalkov, Dmytro ^{[1
]}

Wang, Lien-Chang ^{[1
]}

Chen, Eugene ^{[1
]}

Huai, Yiming ^{[1
]}

机构：

[1] Grandis Inc, Milpitas, CA 95035 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期

关键词：

D O I：

10.1063/1.2165169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present spin-transfer switching results for MgO-based magnetic tunneling junctions (MTJs) with large tunneling magnetoresistance ratio of up to 150% and low intrinsic switching current density (J(c0)) of (2-3)x10(6) A/cm(2). The low intrinsic switching current density is attributed to high tunneling spin polarization (TSP) in MgO-based MTJs. The current switching data are discussed based on a qualitative study of TSP in MgO-based MTJs. Additional film stack modification needed to decrease the switching current to meet the requirement of advanced magnetoresistive random access memory application is also discussed. (C) 2006 American Institute of Physics.

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页数：5

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