Air-assisted high-performance field-effect transistor with thin films of picene

被引：224

作者：

Okamoto, Hideki ^{[1
]}

Kawasaki, Naoko ^{[2
]}

Kaji, Yumiko ^{[2
]}

Kubozono, Yoshihiro ^{[2
]}

Fujiwara, Akihiko ^{[3
]}

Yamaji, Minoru ^{[4
]}

机构：

[1] Okayama Univ, Div Chem & Biochem, Okayama 7008530, Japan

[2] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan

[3] Japan Adv Inst Sci & Technol, Ishikawa 9231292, Japan

[4] Gunma Univ, Dept Chem & Chem Biol, Kiryu, Gunma 3768515, Japan

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2008年 / 130卷 / 32期

关键词：

D O I：

10.1021/ja803291a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, mu, of 1.1 cm(2) V-1 s(-1) and the on-off ratio of >10(5). This excellent device performance was realized under atmospheric conditions. The p increased with an increase in temperature, and the FET performance was improved by exposure to air or O-2 for a long time. This result implies that this device is an air (O-2)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.

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收藏

页码：10470 / +

页数：3

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