Au metal-induced lateral crystallisation (MILC) of hydrogenated amorphous silicon thin film with very low annealing temperature and fast MILC rate

被引：25

作者：

Lee, KH ^{[1
]}

Fang, YK ^{[1
]}

Fan, SH ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, VLSI Technol Lab, Tainan 70101, Taiwan

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 13期

关键词：

D O I：

10.1049/el:19990743

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Au metal-induced lateral crystallisation (Au-MILC) of a-Si:H film has been investigated under various crystallisation conditions. By annealing at 400 degrees C for 10h, the MILC rate induced by Au can be as large as 15.9 mu m/h which is much Faster than that possible with Ni and Pd. Owing to the very low annealing temperature treatment (less than or equal to 400 degrees C), the Au-MILC process represents an important technique for fabricating low cost ICs with poly-Si TFT structure on conventional glass substrate.

引用

页码：1108 / 1109

页数：2

共 7 条

[1] CRYSTALLIZATION OF LPCVD SILICON FILMS BY LOW-TEMPERATURE ANNEALING [J].

AOYAMA, T ;

KAWACHI, G ;

KONISHI, N ;

SUZUKI, T ;

OKAJIMA, Y ;

MIYATA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) :1169-1173

[2] Effects of longitudinal grain boundaries on the performance of MILC-TFT's [J].

Bhat, GA ;

Jin, ZH ;

Kwok, HS ;

Wong, M .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (02) :97-99

[3] CRYSTALLIZATION OF AMORPHOUS-SILICON DURING THIN-FILM GOLD REACTION [J].

HULTMAN, L ;

ROBERTSSON, A ;

HENTZELL, HTG ;

ENGSTROM, I ;

PSARAS, PA .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3647-3655

[4] The effects of extended heat treatment on Ni induced lateral crystallization of amorphous silicon thin films [J].

Jin, ZH ;

Moulding, K ;

Kwok, HS ;

Wong, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (01) :78-82

[5] Fabrication of high-mobility p-channel poly-Si thin film transistors by self-aligned metal-induced lateral crystallization [J].

Lee, SW ;

Ihn, TH ;

Joo, SK .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (08) :407-409

[6]

Lee SW, 1996, IEEE ELECTR DEVICE L, V17, P160, DOI 10.1109/55.485160

[7] PD INDUCED LATERAL CRYSTALLIZATION OF AMORPHOUS SI THIN-FILMS [J].

LEE, SW ;

JEON, YC ;

JOO, SK .

APPLIED PHYSICS LETTERS, 1995, 66 (13) :1671-1673

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