Comparison of ultra-low-energy ion implantation of boron and BF2

被引：7

作者：

Park, J ^{[1
]}

Hwang, H ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Buk Ku, Kwangju 500712, South Korea

来源：

SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS | 1999年 / 568卷

关键词：

D O I：

10.1557/PROC-568-71

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have compared the electrical characteristics and the depth profile of an ultrashallow junctions formed by boron implantation at 0.5 keV and BF2 implantation at 2.2 keV. The modeling of the boron profile was performed using the Monte Carlo method for an as-implanted profile and the computationally efficient method for transient-enhanced diffusion. A junction depth of BF2 is shallower than that of boron after annealing. HF dipping prior to rapid thermal annealing causes a significant loss of dopant and high sheet resistance. Considering the 0.1 mu m metal-oxide-semiconductor field-effect-transistor (MOSFET) application, the optimizations of implantation and annealing conditions are necessary to satisfy the requirement of junction depth and sheet resistance.

引用

页码：71 / 75

页数：5

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