Efficiency droop in light-emitting diodes: Challenges and countermeasures

被引:466
作者
Cho, Jaehee [1 ]
Schubert, E. Fred [1 ]
Kim, Jong Kyu [2 ]
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
基金
美国国家科学基金会; 新加坡国家研究基金会;
关键词
Light-emitting diode; efficiency droop; compound semiconductor; carrier asymmetry; HIGH-POWER; ELECTROLUMINESCENCE EFFICIENCY; INGAN; POLARIZATION; ENHANCEMENT; PERFORMANCE; BARRIER; SINGLE; LAYER;
D O I
10.1002/lpor.201200025
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Efficiency droop, i.e. the loss of efficiency at high operating current, afflicts nitride-based light-emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research, as it retards the advancement of solid-state lighting which is just starting to supplant fluorescent as well as incandescent lighting. Although the technical community does not yet have consented to a single cause of droop, this article provides a summary of the present state of droop research, reviews currently discussed droop mechanisms, and presents a recently developed theoretical model for the efficiency droop. In the theoretical model, carrier leakage out of the active region caused by the asymmetry of the pn junction, specifically the disparity between electron and hole concentrations and mobilities, is discussed in detail. The model is in agreement with the droop's key behaviors not only for GaInN LEDs but also for AlGaInP LEDs.
引用
收藏
页码:408 / 421
页数:14
相关论文
共 97 条
[1]   Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates [J].
Akita, Katsushi ;
Kyono, Takashi ;
Yoshizumi, Yusuke ;
Kitabayashi, Hiroyuki ;
Katayama, Koji .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
[2]   A numerical study of Auger recombination in bulk InGaN [J].
Bertazzi, Francesco ;
Goano, Michele ;
Bellotti, Enrico .
APPLIED PHYSICS LETTERS, 2010, 97 (23)
[3]   Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes [J].
Bochkareva, N. I. ;
Voronenkov, V. V. ;
Gorbunov, R. I. ;
Zubrilov, A. S. ;
Lelikov, Y. S. ;
Latyshev, P. E. ;
Rebane, Y. T. ;
Tsyuk, A. I. ;
Shreter, Y. G. .
APPLIED PHYSICS LETTERS, 2010, 96 (13)
[4]  
Bougrov V., 2001, PROPERTIES ADV SEMIC
[5]   INELASTIC AND ELASTIC MECHANISMS OF ELECTRON-CAPTURE TO A QUANTUM-WELL [J].
BRADT, D ;
SIRENKO, YM ;
MITIN, V .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (03) :260-269
[6]   Is Auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes? [J].
Bulashevich, K. A. ;
Karpov, S. Yu. .
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06) :2066-+
[7]   Simulation of visible and ultra-violet group-III nitride light emitting diodes [J].
Bulashevich, KA ;
Mymrin, VF ;
Karpov, SY ;
Zhmakin, IA ;
Zhmakin, AI .
JOURNAL OF COMPUTATIONAL PHYSICS, 2006, 213 (01) :214-238
[8]   Advantages of blue InGaN light-emitting diodes with AlGaN barriers [J].
Chang, Jih-Yuan ;
Tsai, Miao-Chan ;
Kuo, Yen-Kuang .
OPTICS LETTERS, 2010, 35 (09) :1368-1370
[9]   Effect of Electron Leakage on Efficiency Droop in Wide-Well InGaN-Based Light-Emitting Diodes [J].
Chang, Liann-Be ;
Lai, Mu-Jen ;
Lin, Ray-Ming ;
Huang, Chou-Hsiung .
APPLIED PHYSICS EXPRESS, 2011, 4 (01)
[10]   Low Droop Nonpolar GaN/InGaN Light Emitting Diode Grown on m-Plane GaN Substrate [J].
Chang, Shih-Pang ;
Lu, Tien-Chang ;
Zhuo, Li-Fu ;
Jang, Chung-Ying ;
Lin, Da-Wei ;
Yang, Hung-Chih ;
Kuo, Hao-Chung ;
Wang, Shing-Chung .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (05) :H501-H503