Advantages of blue InGaN light-emitting diodes with AlGaN barriers

被引：54

作者：

Chang, Jih-Yuan ^{[1
]}

Tsai, Miao-Chan ^{[2
]}

Kuo, Yen-Kuang ^{[1
]}

机构：

[1] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

[2] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

来源：

OPTICS LETTERS | 2010年 / 35卷 / 09期

关键词：

EFFICIENCY;

D O I：

10.1364/OL.35.001368

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The advantages of blue InGaN light-emitting diodes (LEDs) with AlGaN barriers are studied numerically. The performance curves, energy band diagrams, electrostatic fields, and carrier concentrations are investigated. The simulation results show that the InGaN/AlGaN LED has better performance than its conventional InGaN/GaN counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by AlGaN barriers. (C) 2010 Optical Society of America

引用

页码：1368 / 1370

页数：3

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