Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

被引：233

作者：

Kuo, Yen-Kuang ^{[1
]}

Chang, Jih-Yuan ^{[1
]}

Tsai, Miao-Chan ^{[2
]}

Yen, Sheng-Horng ^{[3
]}

机构：

[1] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

[2] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[3] Epistar Co Ltd, R&D Div, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 01期

关键词：

HETEROSTRUCTURES; EFFICIENCY;

D O I：

10.1063/1.3176406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The advantages of blue InGaN light-emitting diodes (LEDs) with InGaN barriers are studied. The L-I curves, carrier concentrations in the quantum wells, energy band diagrams, and internal quantum efficiency are investigated. The simulation results show that the InGaN/InGaN LED has better performance over its conventional InGaN/GaN counterpart due to the enhancement of electron confinement, the reduced polarization effect between the barrier and well, and the lower potential barrier height for the holes to transport in the active region. The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by InGaN barriers. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3176406]

引用

页数：3

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