Gain spectra measurements by a variable stripe length method with current injection

被引:49
作者
Oster, A
Erbert, G
Wenzel, H
机构
[1] Ferdinand-Braun-Inst. H., D-12489 Berlin
关键词
semiconductor junction lasers; spectral analysis; LASERS;
D O I
10.1049/el:19970605
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new method for determining gain spectra is presented. The amplified spontanous emission is measured and spectrally resolved in both TE and TM polarisations; it is dependent on the current injected into the contact stripes of variable length on the laser structures. The maximum gain and internal losses correspond well with the results of broad area lasers.
引用
收藏
页码:864 / 866
页数:3
相关论文
共 6 条
[1]   TE AND TM OPTICAL GAINS IN ALGAAS GAAS SINGLE-QUANTUM-WELL LASERS [J].
AVRUTIN, EA ;
CHEBUNINA, IE ;
ELIACHEVITCH, IA ;
GUREVICH, SA ;
PORTNOI, ME ;
SHTENGEL, GE .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) :80-87
[2]   Gain, refractive index, and alpha-parameter in InGaAs-GaAs SQW broad-area lasers [J].
Bossert, DJ ;
Gallant, D .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (03) :322-324
[3]   Improved method for gain/index measurements of semiconductor lasers [J].
Bossert, DJ ;
Gallant, D .
ELECTRONICS LETTERS, 1996, 32 (04) :338-339
[4]   GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306
[5]   Measurements of reverse and forward bias absorption and gain spectra in semiconductor laser material [J].
McDougall, SD ;
Ironside, CN .
ELECTRONICS LETTERS, 1995, 31 (25) :2179-2181
[6]   DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALS [J].
SHAKLEE, KL ;
LEHENY, RF .
APPLIED PHYSICS LETTERS, 1971, 18 (11) :475-&