Response to "Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM"

被引：17

作者：

Liu, Qi ^{[1
]}

Jun, Sun ^{[2
]}

Lv, Hangbing ^{[1
]}

Long, Shibing ^{[1
]}

Li, Ling ^{[1
]}

Yin, Kuibo ^{[2
]}

Wan, Neng ^{[2
]}

Li, Yingtao ^{[1
]}

Sun, Litao ^{[2
]}

Liu, Ming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China

[2] Southeast Univ, Minist Educ, Key Lab MEMS, SEU FEI Nanopico Ctr, Nanjing 210096, Jiangsu, Peoples R China

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 02期

关键词：

nonvolatile memory; resistive switching; in situ TEM; conductive filaments; solid-electrolyte insulators; MEMORY;

D O I：

10.1002/adma.201203771

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

引用

页码：165 / 167

页数：3

共 20 条

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