Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells

被引:200
作者
Hsiung, Chang-Po [1 ]
Liao, Hsin-Wei [1 ]
Gan, Jon-Yiew [1 ]
Wu, Tai-Bo [1 ]
Hwang, Jenn-Chang [1 ]
Chen, Frederick [2 ]
Tsai, Ming-Jinn [2 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
[2] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 310, Taiwan
关键词
TiO(2); electrochemical cell; resistance switching; conductive filament; Rayleigh instability; Auger spectrometry; scanning electron microscopy; transmission electron microscopy; RAYLEIGH-INSTABILITY; MEMORY; RESISTANCE; NANOWIRES; NANOTUBES; SWITCHES; DEVICES; SRTIO3;
D O I
10.1021/nn1010667
中图分类号
O6 [化学];
学科分类号
070301 [无机化学];
摘要
In this paper, we report on the formation and rupture of Ag nanofilament on planar Ag/TiO(2)/Pt cells using visual observation. During the forming process, the filament tends to stay very thin. Specifically, it is so thin that it breaks up into a chain of nanospheres (according to Rayleigh instability) right after the formation has been completed. Similar mechanical breakup may also impact vertically stacked cells, causing reliability concerns.
引用
收藏
页码:5414 / 5420
页数:7
相关论文
共 39 条
[1]
Spatial distribution of oxygen vacancies in Cr-doped SrTiO3 during an electric-field-driven insulator-to-metal transition [J].
Andreasson, B. P. ;
Janousch, M. ;
Staub, U. ;
Meijer, G. I. .
APPLIED PHYSICS LETTERS, 2009, 94 (01)
[2]
Bockris J. O. M., 2000, MODERN ELECTROCHEMIS, DOI DOI 10.1016/j.cattod.2012.08.013
[3]
Si/a-Si core/shell nanowires as nonvolatile crossbar switches [J].
Dong, Yajie ;
Yu, Guihua ;
McAlpine, Michael C. ;
Lu, Wei ;
Lieber, Charles M. .
NANO LETTERS, 2008, 8 (02) :386-391
[4]
The effect of contact lines on the Rayleigh instability with anisotropic surface energy [J].
Gurski, KF ;
McFadden, GB ;
Miksis, MJ .
SIAM JOURNAL ON APPLIED MATHEMATICS, 2006, 66 (04) :1163-1187
[5]
SWITCHING IN AMORPHOUS-SILICON DEVICES [J].
JAFAR, M ;
HANEMAN, D .
PHYSICAL REVIEW B, 1994, 49 (19) :13611-13615
[6]
Field-programmable rectification in rutile TiO2 crystals [J].
Jameson, John R. ;
Fukuzumi, Yoshiaki ;
Wang, Zheng ;
Griffin, Peter ;
Tsunoda, Koji ;
Meijer, G. Ingmar ;
Nishi, Yoshio .
APPLIED PHYSICS LETTERS, 2007, 91 (11)
[7]
Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory [J].
Janousch, Markus ;
Meijer, G. Ingmar ;
Staub, Urs ;
Delley, Bernard ;
Karg, Siegfried F. ;
Andreasson, Bjorn P. .
ADVANCED MATERIALS, 2007, 19 (17) :2232-+
[8]
Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere [J].
Jeong, Doo Seok ;
Schroeder, Herbert ;
Breuer, Uwe ;
Waser, Rainer .
JOURNAL OF APPLIED PHYSICS, 2008, 104 (12)
[9]
CMOS compatible nanoscale nonvolatile resistance, switching memory [J].
Jo, Sung Hyun ;
Lu, Wei .
NANO LETTERS, 2008, 8 (02) :392-397
[10]
High-Density Crossbar Arrays Based on a Si Memristive System [J].
Jo, Sung Hyun ;
Kim, Kuk-Hwan ;
Lu, Wei .
NANO LETTERS, 2009, 9 (02) :870-874