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CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors

被引：3
作者：
Hsu, CC
Yang, YF
Ou, HJ
Yang, ES
机构：
[1] CHINESE UNIV HONG KONG,DEPT ELECT ENGN,HONG KONG,HONG KONG
[2] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 08期
关键词：
D O I：
10.1063/1.117085
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The application of CCl4-doped semi-insulating InP as a buffer layer in a pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor (HEMT) grown by metalorganic chemical vapor deposition is reported. This Al-free InP-base HEMT with a gate length of 1.3 mu m has extrinsic transconductances of 420 and 610 mS/mm at 300 and 77 K, respectively. A cutoff frequency of 15 GHz and a maximum oscillation frequency of 40 GHz are obtained. The results demonstrate the CCL(4)-doped semi-insulating InP is a promising buffer layer for InP-based HEMT. (C) 1996 American Institute of Physics.
引用
收藏
页码：1143 / 1144
页数：2
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