PSEUDOMORPHIC GA0.2IN0.8P/GA-0.47,IN0.53AS/INP HEMT GROWN BY MOVPE USING TBP AND TBA

被引：5

作者：

YANG, YF ^{[1
]}

HSU, CC ^{[1
]}

YANG, ES ^{[1
]}

机构：

[1] CHINESE UNIV HONG KONG,DEPT ELECTR ENGN,HONG KONG,HONG KONG

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 22期

关键词：

HIGH ELECTRON MOBILITY TRANSISTORS; VAPOR PHASE EPITAXIAL GROWTH;

D O I：

10.1049/el:19941277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor grown by MOVPE using TBP and TBA is reported for the first time. The extrinsic transconductances of 480 and 620mS/mm with the maximum output current of 660 and 780mA/mm were achieved for the 1.2 mu m gate length device at 300 and 77K, respectively. These data are comparable to those of AlInAs/GaInAs HEMTs grown by MOVPE and MBE indicating the good material quality.

引用

页码：1894 / 1895

页数：2

共 6 条

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