High performance solution-processed indium oxide thin-film transistors

被引：186

作者：

Kim, Hyun Sung

Byrne, Paul D.

Facchetti, Antonio ^{[1
]}

Marks, Tobin J.

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2008年 / 130卷 / 38期

关键词：

D O I：

10.1021/ja804262z

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In2O3 thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2, self-assembled nanodielectrics (SANDs)) by spin-coating In2O3 film precursor solutions consisting of ethanolamine (EAA) and InCl3 in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In2O3 00 L orientation and are obtained only within a well-defined range of base: In3+ molar ratios. Electron mobilities as high as similar to 44 cm(2) V-1 s(-1) are measured for n(+)-Si/SAND/In2O3/Au devices using an EAA/In3+ molar ratio = 10, This result combined with /on//off ratios of similar to 10(6) and <5 V operating voltages is encouraging for high-speed applications.

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页码：12580 / +

页数：3

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