Energy-band alignment of II-VI/Zn3P2 heterojunctions from x-ray photoemission spectroscopy

被引:23
作者
Bosco, Jeffrey P. [1 ,2 ,3 ]
Scanlon, David O. [4 ]
Watson, Graeme W. [5 ,6 ]
Lewis, Nathan S. [1 ,2 ,3 ]
Atwater, Harry A. [1 ,2 ,3 ]
机构
[1] CALTECH, Watson Lab, Pasadena, CA 91125 USA
[2] CALTECH, Noyes Lab, Beckman Inst, Pasadena, CA 91125 USA
[3] CALTECH, Kavli Nanosci Inst, Pasadena, CA 91125 USA
[4] UCL, Kathleen Lonsdale Mat Chem, Dept Chem, London WC1H 0AJ, England
[5] Trinity Coll Dublin, Sch Chem, Coll Green, Dublin 2, Ireland
[6] Trinity Coll Dublin, CRANN, Coll Green, Dublin 2, Ireland
基金
英国工程与自然科学研究理事会;
关键词
MOLECULAR-BEAM EPITAXY; PRECISE DETERMINATION; COMPOUND-SOURCE; ZN3P2; GROWTH; SEMICONDUCTORS; CONDUCTIVITY; EVAPORATION; LIMITS; EDGE;
D O I
10.1063/1.4807646
中图分类号
O59 [应用物理学];
学科分类号
摘要
The energy-band alignments for zb-ZnSe(001)/alpha-Zn3P2(001), w-CdS(0001)/alpha-Zn3P2(001), and w-ZnO(0001)/alpha-Zn3P2(001) heterojunctions have been determined using high-resolution x-ray photoelectron spectroscopy via the Kraut method. Ab initio hybrid density functional theory calculations of the valence-band density of states were used to determine the energy differences between the core level and valence-band maximum for each of the bulk materials. The ZnSe/Zn3P2 heterojunction had a small conduction-band offset, Delta E-C, of -0.03+/-0.11 eV, demonstrating a nearly ideal energy-band alignment for use in thin-film photovoltaic devices. The CdS/Zn3P2 heterojunction was also type-II but had a larger conduction-band offset of Delta E-C = -0.76+/-0.10 eV. A type-III alignment was observed for the ZnO/Zn3P2 heterojunction, with Delta E-C = -1.61+/-0.16 eV indicating the formation of a tunnel junction at the oxide-phosphide interface. The data also provide insight into the role of the II-VI/Zn3P2 band alignment in the reported performance of Zn3P2 heterojunction solar cells. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:8
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