Microscopic structure of GaSb(001) c(2x6) surfaces prepared by Sb decappiug of MBE-grown samples

被引：23

作者：

ReschEsser, U ^{[1
]}

Esser, N ^{[1
]}

Brar, B ^{[1
]}

Kroemer, H ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.55.15401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study we report on the microscopic structure of GaSb(001) c(2 x 6) surfaces prepared by Sb decapping. Molecular beam epitaxy grown GaSb(001) layers capped with a protective Sb layer were transferred through the atmosphere into an UHV-analysis system and investigated by scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). After thermal desorption of the capping layer clear c(2 x 6) LEED patterns were observed. STM images show flat surface areas with a rowlike, somewhat disordered structure. High-resolution images resolve individual Sb dimers on the surface. The surface is covered by an incomplete layer of dimerized Sb, adsorbed on a complete second layer of Sb, which is also dimerized in that regions not covered by the fractional Sb top layer.

引用

页码：15401 / 15404

页数：4

共 11 条

[1] Mechanism for disorder on GaAs(001)-(2x4) surfaces [J].

Avery, AR ;

Goringe, CM ;

Holmes, DM ;

Sudijono, JL ;

Jones, TS .

PHYSICAL REVIEW LETTERS, 1996, 76 (18) :3344-3347

[2] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706

[3] SB-CAPPING AND DECAPPING OF MBE-GROWN GASB(100) [J].

DUMAS, M ;

NOUAOURA, M ;

BERTRU, N ;

LASSABATERE, L ;

CHEN, W ;

KAHN, A .

SURFACE SCIENCE, 1992, 262 (03) :L91-L95

[4] PHOTOEMISSION AND SCANNING-TUNNELING-MICROSCOPY STUDY OF GASB(100) [J].

FRANKLIN, GE ;

RICH, DH ;

SAMSAVAR, A ;

HIRSCHORN, ES ;

LEIBSLE, FM ;

MILLER, T ;

CHIANG, TC .

PHYSICAL REVIEW B, 1990, 41 (18) :12619-12627

[5] A reflectance anisotropy spectroscopy study of GaSb(100)c(2x6) surfaces prepared by Sb decapping [J].

Goletti, C ;

ReschEsser, U ;

Foeller, J ;

Esser, N ;

Richter, W ;

Brar, B ;

Kroemer, H .

SURFACE SCIENCE, 1996, 352 :771-775

[6] STRUCTURES OF AS-RICH GAAS(001)-(2X4) RECONSTRUCTIONS [J].

HASHIZUME, T ;

XUE, QK ;

ZHOU, J ;

ICHIMIYA, A ;

SAKURAI, T .

PHYSICAL REVIEW LETTERS, 1994, 73 (16) :2208-2211

[7] STRUCTURE OF GAAS(001) SURFACES - THE ROLE OF ELECTROSTATIC INTERACTIONS [J].

NORTHRUP, JE ;

FROYEN, S .

PHYSICAL REVIEW B, 1994, 50 (03) :2015-2018

[8] ELECTRON COUNTING MODEL AND ITS APPLICATION TO ISLAND STRUCTURES ON MOLECULAR-BEAM EPITAXY GROWN GAAS(001) AND ZNSE(001) [J].

PASHLEY, MD .

PHYSICAL REVIEW B, 1989, 40 (15) :10481-10487

[9] ARSENIC PASSIVATION OF MBE GROWN GAAS(100) - STRUCTURAL AND ELECTRONIC-PROPERTIES OF THE DECAPPED SURFACES [J].

RESCH, U ;

ESSER, N ;

RAPTIS, YS ;

RICHTER, W ;

WASSERFALL, J ;

FORSTER, A ;

WESTWOOD, DI .

SURFACE SCIENCE, 1992, 269 :797-803

[10] Surface quality and atomic structure of MBE-grown GaAs(100) prepared by the desorption of a protective arsenic layer [J].

ReschEsser, U ;

Esser, N ;

Wang, DT ;

Kuball, M ;

Zegenhagen, J ;

Fimland, BO ;

Richter, W .

SURFACE SCIENCE, 1996, 352 :71-76

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