A reflectance anisotropy spectroscopy study of GaSb(100)c(2x6) surfaces prepared by Sb decapping

被引：21

作者：

Goletti, C

ReschEsser, U

Foeller, J

Esser, N

Richter, W

Brar, B

Kroemer, H

机构：

[1] IST NAZL FIS MAT, I-00133 ROME, ITALY

[2] TECH UNIV BERLIN, INST FESTKORPERPHYS, D-10623 BERLIN, GERMANY

[3] UNIV CALIF SANTA BARBARA, DEPT ELECT & COMP ENGN, SANTA BARBARA, CA 93106 USA

来源：

SURFACE SCIENCE | 1996年 / 352卷

关键词：

gallium antimonide; reflection spectroscopy; single crystal surfaces; surface structure;

D O I：

10.1016/0039-6028(95)01226-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

MBE-grown samples capped with a protective Sb layer were used to study clean (100) surfaces in UHV. By thermal desorption of the Sb cap layer GaSb surfaces exhibiting c(2 X 6) reconstruction were prepared, then studied by reflectance anisotropy spectroscopy, low energy electron diffraction and Auger electron spectroscopy. The results of this experimental analysis allowed us to determine for the first time the surface related optical anisotropy of the c(2 X 6) reconstruction of GaSb(100) in the range 1.5-5.5 eV, Reflectance anisotropy spectroscopy features related to optical transitions of surface Sb dimers are identified and discussed. Moreover, the appearance of an optical anisotropy related to the linear electro-optic effect at the E(1) bulk critical point shows the existence of band bending at GaSb decapped surfaces.

引用

页码：771 / 775

页数：5

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