High performance solution-processed amorphous zinc tin oxide thin film transistor

被引：253

作者：

Seo, Seok-Jun ^{[1
]}

Choi, Chaun Gi ^{[2
]}

Hwang, Young Hwan ^{[1
]}

Bae, Byeong-Soo ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Samsung SDI Co Ltd, Corp R & D Ctr, Yongin 449902, Gyeonggi Do, South Korea

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 03期

关键词：

ROOM-TEMPERATURE; SEMICONDUCTORS;

D O I：

10.1088/0022-3727/42/3/035106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film transistors (TFTs) with amorphous zinc tin oxide (ZTO) channel layer were fabricated by a simple and low-cost solution process. The ZTO thin films are highly transparent (> 90% transmittance) in the visible region. The ZTO TFTs fabricated at 400 and 500 degrees C are operated in enhancement mode. The TFT annealed at 500 degrees C shows a mobility of 14.11 cm(2) V-1 s(-1), a threshold voltage of 1.71V, a subthreshold slope of 0.4 V dec(-1) and an on-off current ratio greater than 10(8). In addition, we investigated the gate bias stability of the TFT. Positive gate bias results in a positive shift of the threshold voltage due to the charge trapping in the channel/dielectric interface.

引用

页数：5

共 31 条

[1]

ARQUINHA P, 2006, J NONCRYST SOLIDS, V352, P1749

[2] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[3] High-performance, spin-coated zinc tin oxide thin-film transistors [J].

Chang, Y. -J. ;

Lee, D. -H. ;

Herman, G. S. ;

Chang, C. -H. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (05) :H135-H138

[4] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[5] Solution-processed indium-zinc oxide transparent thin-film transistors [J].

Choi, Chaun Gi ;

Seo, Seok-Jun ;

Bae, Byeong-Soo .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (01) :H7-H9

[6] Investigating the stability of zinc oxide thin film transistors [J].

Cross, R. B. M. ;

De Souza, M. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[7] Chemical-bath ZnO buffer layer for CuInS2 thin-film solar cells [J].

Ennaoui, A ;

Weber, M ;

Scheer, R ;

Lewerenz, HJ .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1998, 54 (1-4) :277-286

[8] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[9] Stability of transparent zinc tin oxide transistors under bias stress [J].

Goerrn, P. ;

Hoelzer, P. ;

Riedl, T. ;

Kowalsky, W. ;

Wang, J. ;

Weimann, T. ;

Hinze, P. ;

Kipp, S. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[10] Towards see-through displays:: Fully transparent thin-film transistors driving transparent organic light-emitting diodes [J].

Görrn, P ;

Sander, M ;

Meyer, J ;

Kröger, M ;

Becker, E ;

Johannes, HH ;

Kowalsky, W ;

Riedl, T .

ADVANCED MATERIALS, 2006, 18 (06) :738-+

← 1 2 3 4 →