Selective chemical etching of hexagonal boron nitride compared to cubic boron nitride

被引:16
作者
Harris, SJ
Weiner, AM
Doll, GL
Meng, WJ
机构
[1] Phys. and Phys. Chemistry Department, General Motors R and D Center, Warren
关键词
D O I
10.1557/JMR.1997.0060
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A BN film containing comparable amounts of sp(2) and sp(3) phases was subjected to a gas-phase chemical etch in a hot-filament environment containing 1% CH4 in H-2. After a partial etch, examination by FTIR shows that the sp(2) was preferentially etched, leaving a larger sp(3) fraction than in the unetched film. The possibility that preferential etching could be used to increase the purity of cBN films is discussed.
引用
收藏
页码:412 / 415
页数:4
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