Oxidation behavior of a fully dense polymer-derived amorphous silicon carbonitride ceramic

被引：88

作者：

Bharadwaj, L

Fan, Y

Zhang, LG

Jiang, DP

An, LN ^{[1
]}

机构：

[1] Univ Cent Florida, AMPAC, Orlando, FL 32816 USA

[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun, Peoples R China

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2004年 / 87卷 / 03期

关键词：

D O I：

10.1111/j.1551-2916.2004.00483.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The oxidation behavior of a polymer-derived amorphous silicon carbonitride (SiCN) ceramic was studied at temperature range of 900degrees-1200degreesC using fully dense samples, which were obtained using a novel pressure-assisted pyrolysis technique. The oxidation kinetics was investigated by measuring the thickness of oxide layers. The data were found to fit a typical parabolic kinetics. The measured oxidation rate constant and activation energy of the SiCN are close to those of CVD and single-crystal SiC. The results suggest that the oxidation mechanism of the SiCN is the same as that of SiC: oxygen diffusion through a silica layer.

引用

页码：483 / 486

页数：4

共 34 条

[1]

AN L, 2000, P 13 ANN INT C MICR, P619

[2]

An LA, 1998, J AM CERAM SOC, V81, P1349

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