Correlation between cathodoluminescence and structural defects in ZnS/GaAs(100) and ZnSe/GaAs(100) studied by transmission electron microscopy

被引：15

作者：

Mitsui, T

Yamamoto, N

Yoshino, J

Tadokoro, T

Ohta, S

Yanashima, K

Inoue, K

机构：

[1] NIPPON SEIKI CO, R&D CTR, NAGAOKA, NIIGATA 94021, JAPAN

[2] TOKYO INST TECHNOL, IMAGING SCI & ENGN LAB, MIDORI KU, YOKOHAMA, KANAGAWA 227, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1996年 / 100卷

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/0169-4332(96)00352-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The spatial distributions of the cathodoluminescence (CL) emissions from thin ZnS and ZnSe films on GaAs(100) have been examined by the low-temperature CL imaging system combined with a transmission electron microscope (TEM). The correlation between these CL emissions and structural defects were studied by comparing the monochromatic CL images with TEM images for both plan-view and cross-sectional observations. It is found that the bound exciton associated emission (A(0), X) and the (e, A) emission are affected by the stacking fault distribution, The localization of the emission due to the DLE transition near the interface suggest the diffusion of Ga or As atoms from the GaAs substrate.

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收藏

页码：625 / 633

页数：9

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