MECHANISM FOR THE THRESHOLD VOLTAGE SHIFT OF A GAAS FIELD-EFFECT TRANSISTOR AROUND DISLOCATIONS

被引：46

作者：

MIYAZAWA, S

WADA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 14期

关键词：

D O I：

10.1063/1.97018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：905 / 907

页数：3

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