Control of line edge roughness of ultrathin resist films subjected to EUV exposure

被引：13

作者：

Ryoo, M ^{[1
]}

Shirayone, S ^{[1
]}

Oizumi, H ^{[1
]}

Matsuzawa, N ^{[1
]}

Irie, S ^{[1
]}

Yano, E ^{[1
]}

Okazaki, S ^{[1
]}

机构：

[1] ASET EUVL, NTT Syst Elect Labs, Atsugi, Kanagawa 2430198, Japan

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2 | 2001年 / 4345卷

关键词：

D O I：

10.1117/12.436814

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The line edge roughness (LER) of ultrathin chemically amplified (CA) KrF-resist-based films was investigated using exposure to extreme ultraviolet (EUV) radiation (13.5 nm). For films between 0.09 mum and 0.13 mum thick, the LER was about 5similar to7% for a target critical dimension (CD) of 70 nm and exposure to coherent illumination (sigma = 0.01). The LER was found to be smaller in samples containing a relatively strong-acid photo-acid generator (PAG). The use of baking conditions producing greater acid diffusivity and the use of weak developer were very effective in reducing the LER of thin resist films. Atomic force microscope (AFM) observations showed the surface morphology of samples with a small LER to be very uniform. These results suggest that the use of a high-sensitivity resist and a weak developer may help to create an environment promoting uniform dissolution, thus resulting in a smaller LER in thin resist films.

引用

页码：903 / 911

页数：9

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