Atmospheric-pressure chemical vapor deposition of group IVb metal phosphide thin films from tetrakisdimethylamidometal complexes and cyclohexylphosphine

被引:18
作者
Blackman, CS
Carmalt, CJ
O'Neill, SA
Parkin, IP
Apostolico, L
Molloy, KC
机构
[1] UCL, Dept Chem, London WC1H 0AJ, England
[2] Univ Bath, Dept Chem, Bath BA2 7AY, Avon, England
关键词
D O I
10.1021/cm031161f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The dual-source atmospheric-pressure chemical vapor deposition of group IVb metal phosphide films from tetrakisdimethylamido(metal) and cyclohexylphosphine precursors is presented. Deposition took place at low temperatures (<500 degreesC), and nitrogen and carbon contamination of the films was negligible. The films had typical stoichiometric metal phosphide properties of high electrical conductivity, hardness, and chemical resistivity.
引用
收藏
页码:1120 / 1125
页数:6
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