Chemical vapour deposition of group Vb metal phosphide thin films

被引：15

作者：

Blackman, CS

Carmalt, CJ

O'Neill, SA

Parkin, IP

Molloy, KC

Apostolico, L

机构：

[1] UCL, Dept Chem, London WC1H 0AJ, England

[2] Univ Bath, Dept Chem, Bath BA2 4JH, Avon, England

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2003年 / 13卷 / 08期

关键词：

D O I：

10.1039/b304084b

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The atmospheric pressure chemical vapour deposition (APCVD) reaction of VCl4 or VOCl3 with cyclohexylphosphine at substrate temperatures of 600 degreesC deposits thin films of amorphous vanadium phosphide. The films are black - gold, hard, chemically resistant and conductive. The APCVD reaction of MCl5 (where M = Nb or Ta) with cyclohexylphosphine at 500 - 600 degreesC deposits films of crystalline beta-MP and at 400 degreesC - 450 degreesC amorphous films of stoichiometry MP are formed. The MP films are metallic, conductive, adherent and chemically resistant.

引用

收藏

页码：1930 / 1935

页数：6

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