Effects of SO2 and I-2 on the photoluminescence of oxidized porous silicon

被引：21

作者：

Kelly, MT ^{[1
]}

Bocarsly, AB ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT CHEM,FRICK LAB,PRINCETON,NJ 08544

来源：

CHEMISTRY OF MATERIALS | 1997年 / 9卷 / 07期

关键词：

D O I：

10.1021/cm9700561

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The photoinduced visible light emission from lightly oxidized porous silicon can be reversibly quenched by both sulfur dioxide molecules and iodine molecules. Possible mechanisms for these processes are compared to the better understood mechanism for, Bronsted base quenching of porous silicon photoemission. Supporting evidence was obtained through infrared spectroscopy, electron paramagnetic resonance spectroscopy,and surface chemistry. The feasibility of fashioning a SO2 sensor using oxidized porous silicon is also discussed.

引用

页码：1659 / 1664

页数：6

共 30 条

[1] QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE BY DEPOSITION OF METAL ADSORBATES [J].