BEHAVIOR OF POROUS SILICON EMISSION-SPECTRA DURING QUENCHING BY IMMERSION IN METAL-ION SOLUTIONS

被引：54

作者：

ANDSAGER, D

HILLIARD, J

NAYFEH, MH

机构：

[1] Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 09期

关键词：

D O I：

10.1063/1.110832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence emission of porous silicon was regularly measured while immersed in dilute metal ion solutions of Cu, Ag, and Au. The emission spectra show progressive quenching that advances from the blue edge towards the red edge of the emission band, causing a continuous shift in the band center and a narrowing of its width. Auger electron spectroscopy data show that the penetration of the metal adsorbate into the porous layer correlates with the degree of quenching of the photoluminescence. These results are interpreted as a progression of the quenching of the photoluminescence inward from the surface of the sample toward the bulk.

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页码：1141 / 1143

页数：3

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