Why are sputter deposited Nd1+xBa2-xCu3O7-δ thin films flatter than NdBa2Cu3O7-δ films?

被引：13

作者：

Bals, S

Van Tendeloo, G

Salluzzo, M

Maggio-Aprile, I

机构：

[1] Univ Antwerp, RUCA, B-2020 Antwerp, Belgium

[2] Univ Naples Federico II, Dipartimento Sci Fis, I-80125 Naples, Italy

[3] Univ Naples Federico II, Ist Nazl Fis Mat, I-80125 Naples, Italy

[4] Univ Geneva, Dept Phys Mat Condensee, CH-1211 Geneva 4, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 22期

关键词：

D O I：

10.1063/1.1421622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution electron microscopy and scanning tunneling microscopy have been used to compare the microstructure of NdBa2Cu3O7-delta and Nd1+xBa2-xCu3O7-delta thin films. Both films contain comparable amounts of Nd2CuO4 inclusions. Antiphase boundaries are induced by unit cell high steps at the substrate or by a different interface stacking. In Nd1+xBa2-xCu3O7-delta the antiphase boundaries tend to annihilate by the insertion of extra Nd layers. Stacking faults, which can be characterized as local Nd2Ba2Cu4O9 inclusions, also absorb the excess Nd. A correlation is made between the excess Nd and the absence of growth spirals at the surface of the Nd-rich films. (C) 2001 American Institute of Physics.

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页码：3660 / 3662

页数：3

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