Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

被引：460

作者：

Lee, Jeong-Min ^{[2
]}

Cho, In-Tak ^{[2
]}

Lee, Jong-Ho ^{[2
]}

Kwon, Hyuck-In ^{[1
]}

机构：

[1] Daegu Univ, Dept Elect Engn, Gyongsan 712714, Gyeongbuk, South Korea

[2] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 09期

关键词：

D O I：

10.1063/1.2977865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The experimental and modeling study of bias-stress-induced threshold voltage instabilities in amorphous indium-gallium-zinc oxide thin film transistors is reported. Positive stress results in a positive shift in the threshold voltage, while the transfer curve hardly moves when negative stress is induced. The time evolution of threshold voltage is described by the stretched-exponential equation, and the shift is attributed to the electron injection from the channel into interface/dielectric traps. The stress amplitudes and stress temperatures are considered as important factors in threshold voltage instabilities, and the stretched-exponential equation is well fitted in various bias temperature stress conditions. (c) 2008 American Institute of Physics.

引用

页数：3

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