Charge trapping induced current instability in pentacene thin film transistors: Trapping barrier and effect of surface treatment

被引：73

作者：

Miyadera, T. ^{[1
,2
]}

Wang, S. D. ^{[1
,3
]}

Minari, T. ^{[1
,2
]}

Tsukagoshi, K. ^{[1
,3
]}

Aoyagi, Y. ^{[1
,2
]}

机构：

[1] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

[2] RIKEN, Wako, Saitama 3510198, Japan

[3] AIST, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058562, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.2949746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The current instability of pentacene thin film transistors is described by the energetic distribution of the barrier height for the trapping of mobile charges at the organic/insulator interface. The trapping energy was quantitatively analyzed by measuring the temperature dependence of current decay, which follows a stretched exponential function. The distribution of the barrier becomes higher and narrower by the use of a self assembled monolayer (SAM) on the insulator surface, whereas the pentacene film morphology has little influence on the trapping barriers. The increase in the barrier height in the SAM-treated device suppresses charge trapping, resulting in stable device operation. (C) 2008 American Institute of Physics.

引用

页数：3

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