Phosphorus and boron implantation in 6H-SiC

Phosphorus and boron ion implantations were performed at various energies in the 50 keV-4 MeV range. Range statistics of P+ and B+ were established by analyzing the as-implanted secondary ion mass spectrometry depth profiles. Anneals were conducted in the temperature range of 1400-1700 degrees C using either a conventional resistive heating ceramic processing furnace or a microwave annealing station. The P implant was found to be stable at any annealing temperature investigated, but the B redistributed during the annealing process. The implant damage is effectively annealed as indicated by Rutherford backscattering measurements. For the 250 keV/1.2x10(15) cm(-2) P implant, annealed at 1600 degrees C for 15 min, the measured donor activation at room temperature is 34% with a sheet resistance of 4.8x10(2) Omega/square. The p-type conduction could not be measured for the B implants. (C) 1997 American Institute of Physics.