Technology of integrable free-standing yttria-stabilized zirconia membranes

被引：7

作者：

Bruschi, P ^{[1
]}

Diligenti, A ^{[1
]}

Nannini, A ^{[1
]}

Piotto, M ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informat Electtron Informat Tel, I-56126 Pisa, Italy

来源：

THIN SOLID FILMS | 1999年 / 346卷 / 1-2期

关键词：

YSZ; micromachining; sensors; silicon;

D O I：

10.1016/S0040-6090(98)01758-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Free-standing yttria-stabilized zirconium oxide membranes were fabricated by means of two different processes which are compatible with the standard complementary metal oxide semiconductor technology. The membrane is a thin film suspended on a pyramid-shape hole obtained on a silicon substrate by means of an anisotropic etching. A square membrane with a maximum side dimension of 170 mu m was obtained. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：251 / 254

页数：4

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