Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

High-quality heterojunctions between p-type diamond single-crystalline,films and highly oriented n-type ZnO films were fabricated by depositing the p-type,diamond single-crystal films on the I-o-type diamond single crystal using a hot filament chemical vapor deposition, and later growing a highly oriented n-type ZnO film on the p-type diamond single-crystal film by magnetron sputtering. Interestingly, anomalously high ideality factors (nmuch greater than2.0) in the prepared ZnO/diamond p-n junction diode in the interim bias voltage range were measured. For this, detailed electronic characterizations of the fabricated p-n junction were conducted, and a theoretical model was proposed to clarify the much higher ideality factors of the special heterojunctiori diode. (C) 2004 American Institute of Physics.