Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO2

被引：298

作者：

Geringer, V. ^{[1
,3
]}

Liebmann, M. ^{[1
,3
]}

Echtermeyer, T. ^{[2
]}

Runte, S. ^{[1
,3
]}

Schmidt, M. ^{[1
,3
]}

Rueckamp, R. ^{[1
,3
]}

Lemme, M. C. ^{[2
]}

Morgenstern, M. ^{[1
,3
]}

机构：

[1] Univ Aachen, Rhein Westfal TH Aachen, Inst Phys 2, D-52074 Aachen, Germany

[2] AMO GmbH, AMICA, D-52074 Aachen, Germany

[3] JARA Fundamentals Future Informat Technol, D-52074 Aachen, Germany

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 07期

关键词：

SCANNING TUNNELING SPECTROSCOPY; ROOM-TEMPERATURE; MICROSCOPY; SCATTERING; RESOLUTION; SURFACE; SHEETS;

D O I：

10.1103/PhysRevLett.102.076102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using scanning tunneling microscopy in an ultrahigh vacuum and atomic force microscopy, we investigate the corrugation of graphene flakes deposited by exfoliation on a Si/SiO2 (300 nm) surface. While the corrugation on SiO2 is long range with a correlation length of about 25 nm, some of the graphene monolayers exhibit an additional corrugation with a preferential wavelength of about 15 nm. A detailed analysis shows that the long-range corrugation of the substrate is also visible on graphene, but with a reduced amplitude, leading to the conclusion that the graphene is partly freely suspended between hills of the substrate. Thus, the intrinsic rippling observed previously on artificially suspended graphene can exist as well, if graphene is deposited on SiO2.

引用

页数：4

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