C-axis-oriented Ru thin films prepared by sputtering in Ar and O2 gas mixture

被引：12

作者：

Abe, Y ^{[1
]}

Kaga, Y ^{[1
]}

Kawamura, M ^{[1
]}

Sasaki, K ^{[1
]}

机构：

[1] Kitami Inst Technol, Fac Engn, Dept Mat Sci, Kitami, Hokkaido 0908507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 12期

关键词：

Ru; c-axis-oriented film; sputtering; Ar+O-2 mixed gas; resistivity; X-ray diffraction; rocking curve; crystal growth;

D O I：

10.1143/JJAP.40.6956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

C-axis-oriented Rut thin films were deposited on glass substrates by Sputtering a Ru target in Ar and O-2, gas mixture with O-2 flow, ratios which were lower than that required for RuO2 formation. A minimum value of 3,5degrees was obtained for the full-width at half maximum (FWHM) of the rocking curve of a Ru (002) peak for the Ru film deposited at a substrate temperature of 500degreesC and O-2 flow ratio of 4%. The c-axis-oriented Ru films were observed to be formed from the initial stage of crystal growth and became continuous even at a film thickness of 3 run. Two-dimensional crystal growth of the single-axis-oriented Ru films was suggested.

引用

页码：6956 / 6958

页数：3

共 15 条

[1] EPITAXIAL-GROWTH OF SRTIO3 FILMS ON PT ELECTRODES AND THEIR ELECTRICAL-PROPERTIES [J].

ABE, K ;

KOMATSU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9B) :2985-2988

[2] Effects of O2 gas flow ratio and flow rate on the formation of RuO2 thin films by reactive sputtering [J].

Abe, Y ;

Kaga, Y ;

Kawamura, M ;

Sasaki, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1348-1351

[3] Ru electrode deposited by sputtering in Ar/O2 mixture ambient [J].

Aoyama, T ;

Murakoshi, A ;

Imai, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (10) :5701-5707

[4] Characteristics of (Ba, Sr)TiO3 capacitors with textured Ru bottom electrode [J].

Aoyama, T ;

Yamazaki, S ;

Imai, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (11) :6348-6357

[5] HIGH-TEMPERATURE CHEMISTRY OF RUTHENIUM-OXYGEN SYSTEM [J].

BELL, WE ;

TAGAMI, M .

JOURNAL OF PHYSICAL CHEMISTRY, 1963, 67 (11) :2432-&

[6] OXYGEN INDUCED PREFERRED ORIENTATION OF DC SPUTTERED PLATINUM [J].

HECQ, M ;

HECQ, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :219-222

[7] Material properties of heteroepitaxial Ir and Pb(Zr,Til-x)O3 films on (100)(ZrO2)1-x(Y2O3)x/(100)Si structure prepared by sputtering [J].

Horita, S ;

Horii, S ;

Umemoto, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9B) :5141-5144

[8] Investigation of ruthenium electrodes for (Ba,Sr)TiO3 thin films [J].

Joo, JH ;

Seon, JM ;

Jeon, YC ;

Oh, KY ;

Roh, JS ;

Kim, JJ ;

Choi, JT .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (6A) :3396-3401

[9] Formation of ultra-thin continuous Pt and Al films by RF sputtering [J].

Kawamura, M ;

Mashima, T ;

Abe, Y ;

Sasaki, K .

THIN SOLID FILMS, 2000, 377 :537-542

[10] Highly (200)-oriented Pt films on SiO2/Si substrates by seed selection through amorphization and controlled grain growth [J].

Kim, MH ;

Park, TS ;

Lee, DS ;

Yoon, E ;

Park, DY ;

Woo, HJ ;

Chun, DI ;

Ha, J .

JOURNAL OF MATERIALS RESEARCH, 1999, 14 (03) :634-637

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