Brillouin scattering study of bulk GaN

被引：83

作者：

Yamaguchi, M ^{[1
]}

Yagi, T

Sota, T

Deguchi, T

Shimada, K

Nakamura, S

机构：

[1] Hokkaido Univ, Fac Engn, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0600812, Japan

[3] Waseda Univ, Dept Elect Elect & Comp Engn, Tokyo 1698555, Japan

[4] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7748601, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 12期

关键词：

D O I：

10.1063/1.370635

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution Brillouin scattering experiments have been performed for a high-quality free-standing gallium nitride (GaN) substrate. Elastic stiffness constants are reported. A comparison is made with the results of an earlier study for a GaN thin film on sapphire substrate. (C) 1999 American Institute of Physics. [S0021-8979(99)03112-6].

引用

页码：8502 / 8504

页数：3

共 19 条

[1]

AMANO H, 1992, APPL PHYS LETT, V64, P1337

[2]

EDGER JH, 1992, J MATER RES, V7, P235

[3] REFRACTIVE INDEX OF GAN [J].

EJDER, E .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 6 (02) :445-&

[4] HIGH-RESPONSIVITY PHOTOCONDUCTIVE ULTRAVIOLET SENSORS BASED ON INSULATING SINGLE-CRYSTAL GAN EPILAYERS [J].

KHAN, MA ;

KUZNIA, JN ;

OLSON, DT ;

VANHOVE, JM ;

BLASINGAME, M ;

REITZ, LF .

APPLIED PHYSICS LETTERS, 1992, 60 (23) :2917-2919

[5] ELECTRONIC-STRUCTURE OF GAN WITH STRAIN AND PHONON DISTORTIONS [J].

KIM, K ;

LAMBRECHT, WRL ;

SEGALL, B .

PHYSICAL REVIEW B, 1994, 50 (03) :1502-1505

[6] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

[7] NOVEL METALORGANIC CHEMICAL VAPOR-DEPOSITION SYSTEM FOR GAN GROWTH [J].

NAKAMURA, S ;

HARADA, Y ;

SENO, M .

APPLIED PHYSICS LETTERS, 1991, 58 (18) :2021-2023

[8] InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (2B) :L217-L220

[9] InGaN-based multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76

[10] INSITU MONITORING AND HALL MEASUREMENTS OF GAN GROWN WITH GAN BUFFER LAYERS [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) :5543-5549

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