Tuning the electronic structure of graphene by ion irradiation

被引：198

作者：

Tapaszto, L. ^{[1
]}

Dobrik, G. ^{[1
]}

Nemes-Incze, P. ^{[1
]}

Vertesy, G. ^{[1
]}

Lambin, Ph. ^{[2
]}

Biro, L. P. ^{[1
]}

机构：

[1] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

[2] Fac Univ Notre Dame Paix, B-5000 Namur, Belgium

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 23期

关键词：

carbon; defect states; electronic density of states; Fermi level; ion beam effects; nanostructured materials; scanning tunnelling microscopy; scanning tunnelling spectroscopy; thin films;

D O I：

10.1103/PhysRevB.78.233407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mechanically exfoliated graphene layers deposited on SiO(2) substrate were irradiated with Ar(+) ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The irradiated samples were investigated by scanning tunneling microscopy and spectroscopy measurements, which reveal that defect sites, besides acting as scattering centers for electrons through local modification of the on-site potential, also induce disorder in the hopping amplitudes. The most important consequence of the induced disorder is the substantial reduction in the Fermi velocity, revealed by bias-dependent imaging of electron-density oscillations observed near defect sites.

引用

页数：4

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