Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures an a GaAs substrate

被引：12

作者：

Cho, YH ^{[1
]}

Choe, BD ^{[1
]}

Lim, H ^{[1
]}

机构：

[1] AJOU UNIV,DEPT ELECT ENGN,SUWON 442749,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 24期

关键词：

D O I：

10.1063/1.117207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conduction-band offset Delta E(c), of Al0.3Ga0.7As/In0.1Ga0.9As0.8P0.2 lattice matched to a GaAs substrate was measured by capacitance-voltage analysis. To examine the transitivity of the band offset in the AlGaAs/InGaP/InGaAsP system, the band offsets of Al0.3Ga0.7As/In0.5Ga0.5P and In0.5Ga0.5P/In0.1Ga0.9As0.8P0.2 were investigated. The value of Delta E(c) for the Al0.3Ga0.7As/In0.1Ga0.9As0.8P0.2 heterostructure, estimated by adding the measured Delta E(c) values in Al0.3Ga0.7As/In0.5Ga0.5P and in In(0.5)G(0.5)P/In0.7Ga0.9As0.8P0.2, agrees well with the value measured directly. We thus conclude that the transitivity rule holds well for the band offsets of an AlGaAs/InGaP/InGaAsP system lattice matched to a GaAs substrate. (C) 1996 American Institute of Physics.

引用

收藏

页码：3740 / 3742

页数：3

相关论文

共 13 条

[1] BAND OFFSETS AND TRANSITIVITY OF IN1-XGAXAS/IN1-YALYAS/INP HETEROSTRUCTURES [J].

BOHRER, J ;

KROST, A ;

WOLF, T ;

BIMBERG, D .

PHYSICAL REVIEW B, 1993, 47 (11) :6439-6443

[2] LACK OF BAND-OFFSET TRANSITIVITY FOR SEMICONDUCTOR HETEROJUNCTIONS WITH POLAR ORIENTATION - ZNSE-GE(001), GE-GAAS(001), AND ZNSE-GAAS(001) [J].

BRATINA, G ;

VANZETTI, L ;

SORBA, L ;

BIASIOL, G ;

FRANCIOSI, A ;

PERESSI, M ;

BARONI, S .

PHYSICAL REVIEW B, 1994, 50 (16) :11723-11729

[3]

Capasso F., 1987, Heterojunction Band Discontinuities: Physics and Device Applications

[4] DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF IN0.5GA0.5P/IN-1-XGAXAS1-YPY BY CAPACITANCE-VOLTAGE ANALYSIS [J].

CHO, YH ;

KIM, KS ;

RYU, SW ;

KIM, SK ;

CHOE, BD ;

LIM, H .

APPLIED PHYSICS LETTERS, 1995, 66 (14) :1785-1787

[5] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS [J].

FORREST, SR ;

SCHMIDT, PH ;

WILSON, RB ;

KAPLAN, ML .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1199-1201

[6] BAND-OFFSET TRANSITIVITY IN STRAINED (001) HETEROINTERFACES [J].

FOULON, Y ;

PRIESTER, C .

PHYSICAL REVIEW B, 1992, 45 (11) :6259-6262

[7] BAND OFFSET TRANSITIVITY AT THE INGAAS/INALAS/INP(001) HETEROINTERFACES [J].

HYBERTSEN, MS .

APPLIED PHYSICS LETTERS, 1991, 58 (16) :1759-1761

[8] Band line-up transition in AlxGa1-xAs/In0.5Ga0.5P from capacitance-voltage analysis [J].

Kim, IJ ;

Cho, YH ;

Kim, KS ;

Choe, BD ;

Lim, H .

APPLIED PHYSICS LETTERS, 1996, 68 (24) :3488-3490

[9] DETERMINATION OF HETEROJUNCTION BAND OFFSETS BY CAPACITANCE-VOLTAGE PROFILING THROUGH NONABRUPT ISOTYPE HETEROJUNCTIONS [J].

KROEMER, H .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :504-505

[10] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J].

KROEMER, H ;

CHIEN, WY ;

HARRIS, JS ;

EDWALL, DD .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :295-297