DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF IN0.5GA0.5P/IN-1-XGAXAS1-YPY BY CAPACITANCE-VOLTAGE ANALYSIS

被引：12

作者：

CHO, YH ^{[1
]}

KIM, KS ^{[1
]}

RYU, SW ^{[1
]}

KIM, SK ^{[1
]}

CHOE, BD ^{[1
]}

LIM, H ^{[1
]}

机构：

[1] AJOU UNIV,DEPT ELECTR ENGN,SUWON,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 14期

关键词：

D O I：

10.1063/1.113321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conductionâband discontinuity ÎEc and interface charge density Ï have been studied for In0.5Ga0.5P/In1âxGaxAs1âyPy (y<0.3) heterojunctions prepared by liquid phase epitaxy. The carrier concentration profiles of both normal (In0.5Ga0.5P on In1âxGaxAs1âyPy) and inverted (In1âxGaxAs1âyPy on In0.5Ga0.5P) structures are obtained by capacitanceâvoltage measurements, which agree well with the results of the selfâconsistent numerical calculations. The currentâvoltage and deepâlevel transient spectroscopy measurements confirm the validity of the result. It is found that ÎEc corresponds to 18% of the bandâgap difference ÎEg, for both normal and inverted structures. © 1995, American Institute of Physics. All rights reserved.

引用

收藏

页码：1785 / 1787

页数：3

相关论文

共 17 条

[1] CONDUCTION-BAND AND VALENCE-BAND OFFSETS IN GAAS/GA0.51IN0.49P SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BISWAS, D ;

DEBBAR, N ;

BHATTACHARYA, P ;

RAZEGHI, M ;

DEFOUR, M ;

OMNES, F .

APPLIED PHYSICS LETTERS, 1990, 56 (09) :833-835

[2] GA0.51IN0.49P/GAAS HEMTS EXHIBITING GOOD ELECTRICAL PERFORMANCE AT CRYOGENIC TEMPERATURES [J].

CHAN, YJ ;

PAVLIDIS, D ;

RAZEGHI, M ;

OMNES, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (10) :2141-2147

[3] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS [J].

FORREST, SR ;

SCHMIDT, PH ;

WILSON, RB ;

KAPLAN, ML .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1199-1201

[4] HIGH-POWER BURIED INGAASP/GAAS (LAMBDA = 0.8-MU-M) LASER-DIODES [J].

GARBUZOV, DZ ;

ANTONISHKIS, NJ ;

ZHIGULIN, SN ;

ILINSKAYA, ND ;

KOCHERGIN, AV ;

LIFSHITZ, DA ;

RAFAILOV, EU ;

FUKSMAN, MV .

APPLIED PHYSICS LETTERS, 1993, 62 (10) :1062-1064

[5] HIGH-POWER 0.8 MICRO-M INGAASP-GAAS SCH SQW LASERS [J].

GARBUZOV, DZ ;

ANTONISHKIS, NY ;

BONDAREV, AD ;

GULAKOV, AB ;

ZHIGULIN, SN ;

KATSAVETS, NI ;

KOCHERGIN, AV ;

RAFAILOV, EV .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1531-1536

[6] LIQUID-PHASE EPITAXY OF MISCIBLE AND IMMISCIBLE GAINPAS ALLOYS ON (100)-ORIENTED GAPXAS1-X (X=0, 0.2, 0.4) SUBSTRATES [J].

ISHIKAWA, M ;

ONDA, T ;

OGASAWARA, N ;

ITO, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (11) :2332-2341

[7] PULSED OPERATION OF INGAASP/INGAP DOUBLE HETEROSTRUCTURE VISIBLE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

IWAMOTO, T ;

MORI, K ;

MIZUTA, M ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L131-L132

[8] PHOTOLUMINESCENCE OF A STAGGERED IN0.5GA0.5P/ALXGA1-XAS HETEROJUNCTION [J].

KIM, KS ;

LEE, JB ;

CHOE, BD ;

JEONG, WG ;

LIM, H .

APPLIED PHYSICS LETTERS, 1994, 65 (04) :451-453

[9] BAND LINEUP FOR A GAINP/GAAS HETEROJUNCTION MEASURED BY A HIGH-GAIN NPN HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KOBAYASHI, T ;

TAIRA, K ;

NAKAMURA, F ;

KAWAI, H .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :4898-4902

[10] DETERMINATION OF HETEROJUNCTION BAND OFFSETS BY CAPACITANCE-VOLTAGE PROFILING THROUGH NONABRUPT ISOTYPE HETEROJUNCTIONS [J].

KROEMER, H .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :504-505