PULSED OPERATION OF INGAASP/INGAP DOUBLE HETEROSTRUCTURE VISIBLE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：5

作者：

IWAMOTO, T

MORI, K

MIZUTA, M

KUKIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 02期

关键词：

D O I：

10.1143/JJAP.24.L131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L131 / L132

页数：2

共 8 条

[1] DOPED INGAP GROWN BY MOVPE ON GAAS [J].

IWAMOTO, T ;

MORI, K ;

MIZUTA, M ;

KUKIMOTO, H .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :27-31

[2] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXASYP1-Y ON GAAS [J].

IWAMOTO, T ;

MORI, K ;

MIZUTA, M ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03) :L191-L193

[3] OPTICALLY PUMPED LASER OPERATION OF INGAASP/INGAP DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

IWAMOTO, T ;

MORI, K ;

MIZUTA, M ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L429-L431

[4] 0.67 MU-M ROOM-TEMPERATURE OPERATION OF GAINASP ALGAAS LASERS ON GAAS PREPARED BY LPE [J].

KISHINO, K ;

KOIZUMI, Y ;

YOKOCHI, A ;

KINOSHITA, S ;

TAKO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09) :L740-L742

[5] CONTINUOUSLY OPERATED VISIBLE-LIGHT-EMITTING LASERS USING LIQUID-PHASE-EPITAXIAL INGAPAS GROWN ON GAAS SUBSTRATES [J].

MUKAI, S ;

YAJIMA, H ;

MITSUHASHI, Y ;

SHIMADA, J ;

KUTSUWADA, N .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :24-26

[6]

USUI A, 1982, 1981 P INT S GAAS RE, P137

[7] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP [J].

YOSHINO, J ;

IWAMOTO, T ;

KUKIMOTO, H .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :74-78

[8] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF IN1-XGAXP (X APPROXIMATELY 0.5) ON GAAS [J].

YOSHINO, J ;

IWAMOTO, T ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :L290-L292

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