n-Type Naphthalene Diimide-Biselenophene Copolymer for All-Polymer Bulk Heterojunction Solar Cells

被引：118

作者：

Hwang, Ye-Jin

Ren, Guoqiang

Murari, Nishit M.

Jenekhe, Samson A. ^{[1
]}

机构：

[1] Univ Washington, Dept Chem Engn, Seattle, WA 98195 USA

来源：

MACROMOLECULES | 2012年 / 45卷 / 22期

基金：

美国国家科学基金会;

关键词：

LOW-BANDGAP POLYMERS; CONJUGATED POLYMERS; ELECTRON-TRANSPORT; PHOTOVOLTAIC CELLS; CHARGE-TRANSPORT; PHASE-SEPARATION; ACCEPTOR; DONOR; MOBILITY; SEMICONDUCTORS;

D O I：

10.1021/ma3020239

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

A new solution processable n-type polymer semiconductor is synthesized and characterized for use as an electron acceptor material in all-polymer bulk heterojunction solar cells. The new crystalline copolymer, poly(naphthalene diimide-alt-biselenophene) (PNDIBS), has a high field-effect electron mobility (0.07 cm(2)/(V s)) and broad visible-near-infrared absorption band with an optical band gap of 1.4 eV. All-polymer bulk heterojunction solar cells comprised of PNDIBS acceptor and poly(3-hexylthiophene) donor have a photovoltaic power conversion efficiency of 0.9%. The external quantum efficiency spectrum of the all-polymer solar cells shows that about 19% of the photocurrent comes from the near infrared (700-900 nm) light harvesting by the new n-type polymer semiconductor.

引用

收藏

页码：9056 / 9062

页数：7

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