Quantum resistance metrology using graphene

被引：58

作者：

Janssen, T. J. B. M. ^{[1
]}

Tzalenchuk, A. ^{[1
,2
]}

Lara-Avila, S. ^{[3
]}

Kubatkin, S. ^{[3
]}

Fal'ko, V. I. ^{[4
]}

机构：

[1] Natl Phys Lab, Teddington TW11 0LW, Middx, England

[2] Univ London, Egham TW20 0EX, Surrey, England

[3] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

[4] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

REPORTS ON PROGRESS IN PHYSICS | 2013年 / 76卷 / 10期

基金：

瑞典研究理事会; 英国工程与自然科学研究理事会;

关键词：

QUANTIZED HALL RESISTANCE; ELECTRON-GAS; CAPACITANCE; CONSTANTS; STANDARDS; TRANSPORT; GRAPHITE; AMPERE; DEVICE;

D O I：

10.1088/0034-4885/76/10/104501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper, we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also briefly discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally, we discuss other possible applications of graphene in metrology.

引用

页数：24

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