Depth analysis of phase formation in Si after high-dose Fe ion implantation by depth-selective conversion-electron Mossbauer spectroscopy

被引:9
作者
Kruijer, S [1 ]
Keune, W [1 ]
Dobler, M [1 ]
Reuther, H [1 ]
机构
[1] ROSSENDORF INC,FORSCHUNGSZENTRUM ROSSENDORF EV,INST IONENSTRAHLPHYS & MAT FORSCH,D-01314 DRESDEN,GERMANY
关键词
D O I
10.1063/1.118996
中图分类号
O59 [应用物理学];
学科分类号
摘要
Fe+ ions of 200 keV in energy were implanted into Si(111) at 350 degrees C with a dose of 7 x 10(17) cm(-2). The depth distribution of the two formed phases (epsilon-FeSi and beta-FeSi2) was investigated nondestructively up to a depth of about 800 Angstrom by depth-selective conversion-electron Mossbauer spectroscopy (DCEMS) in combination with depth-profiling (destructive) Auger electron spectroscopy (AES). Near the surface only beta-FeSi2 is formed, while a mixture of beta-FeSi2 and epsilon-FeSi is formed at larger depths. The Fe-concentration depth profile calculated from the DCEMS results is in good agreement with that measured by AES. (C) 1997 American Institute of Physics.
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页码:2696 / 2698
页数:3
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