The effects of electrical stress and temperature on the properties of polycrystalline silicon thin-film transistors fabricated by metal induced lateral crystallization

被引：12

作者：

Kim, TK ^{[1
]}

Kim, GB ^{[1
]}

Lee, BI ^{[1
]}

Joo, SK ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 07期

关键词：

electrical stress; MILC; Ni-offset; poly-Si; temperature;

D O I：

10.1109/55.847376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Asymmetric Ni-offset method was proposed to improve the electrical properties of poly-Si thin-film transistors (TFT's) fabricated by metal-induced lateral crystallization (MILC). The MILC/MILC boundary, which was inevitably located within the channel when formed by symmetric Ni-offset, could be successfully extracted from channel region by new asymmetric Ni-offset method. Therefore, thus fabricated TFT's showed lower leakage current and better thermal stability than symmetric Ni-offset TFT's. In addition, the effects of electrical stress and temperature on the electrical properties of symmetric/asymmetric Ni-offset TFT's were investigated.

引用

页码：347 / 349

页数：3

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