VCSEL based modules for optical interconnects

被引：10

作者：

Strzelecka, EM ^{[1
]}

Morgan, RA ^{[1
]}

Liu, Y ^{[1
]}

Walterson, B ^{[1
]}

Skogen, J ^{[1
]}

Kalweit, E ^{[1
]}

Bounak, S ^{[1
]}

Chanhvongsak, H ^{[1
]}

Marta, T ^{[1
]}

Skogman, D ^{[1
]}

Nohava, J ^{[1
]}

Gieske, J ^{[1
]}

Lehman, J ^{[1
]}

Hibbs-Brenner, MK ^{[1
]}

机构：

[1] Honeywell Technol Ctr, Plymouth, MN 55441 USA

来源：

VERTICAL-CAVITY SURFACE-EMITTING LASERS III | 1999年 / 3627卷

关键词：

VCSELs; optical interconnects; MSM detectors; semiconductor lasers; data links;

D O I：

10.1117/12.347087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present characteristics of 850-nm oxide confined vertical-cavity surface-emitting lasers (VCSELs) developed for applications in optical parallel data links and free-space optical interconnects. Low threshold currents of less than 200 mu A, wall-plug efficiencies approaching 30%, operating voltages of less than 2 V for 1 mW of optical power, and operation over a wide temperature range, up to 190 degrees C, are demonstrated. We optimized VCSEL arrays for operation at elevated temperatures for use in dense free-space interconnects. Excellent performance uniformity - optical power of 1+/-0.1 mW at a drive current of 3 mA - across a 20x20 array was achieved at 75 degrees C. We integrated two-dimensional top emitting VCSEL arrays with top-illuminated metal-semiconductor-metal (MSM) detectors for future use with CMOS integrated circuits. We discuss design issues encountered in VCSEL-based modules for optical interconnects.

引用

页码：2 / 13

页数：12

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