Preparation of (001)-oriented PZT thick films on silicon wafer by pulsed laser deposition

被引：9

作者：

Liu, JM ^{[1
]}

Xu, SY

Zhou, WZ

Jiang, XH

Ong, CK

Lim, LC

机构：

[1] Natl Univ Singapore, Inst Mat Res & Engn, Singapore 119260, Singapore

[2] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore

[3] Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1999年 / 269卷 / 1-2期

关键词：

ferroelectric and piezoelectric property; PZT thick film; pulsed laser deposition;

D O I：

10.1016/S0921-5093(99)00181-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Completely (001)-oriented Pb(Zr0.52Ti0.48)O-3 (PZT) films up to similar to 10 mu m thick, deposited on (100) silicon wafers with Y-stabilized ZrO2 (YSZ) as buffer and YBCO as electrode, are prepared by using pulsed laser deposition. The X-ray rocking curve scanning with respect to (001) reflection of 6.0-mu m thick films exhibits the FWHM of only 0.6-0.7 degrees. Small grain size and smooth surface of the as-prepared films were identified. The performance of YSZ as excellent resisting layer against silicon diffusion was confirmed by the SIMS measurements. The electrical property evaluations demonstrated quite good ferroelectric property. A piezoelectric coefficient d(31) similar to -300 pC/N, acceptable for piezoelectric applications, was measured. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：67 / 72

页数：6

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