Elaboration of Bi2Se3 by metalorganic chemical vapour deposition

被引：25

作者：

Giani, A ^{[1
]}

Al Bayaz, A ^{[1
]}

Foucaran, A ^{[1
]}

Pascal-Delannoy, F ^{[1
]}

Boyer, A ^{[1
]}

机构：

[1] Univ Montpellier 2, Ctr Elect & Microoptoelect Montpellier, UMR CNRS 5507, F-34095 Montpellier 05, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 236卷 / 1-3期

关键词：

metalorganic vapor phase epitaxy; bismuth compounds; semiconducting materials;

D O I：

10.1016/S0022-0248(01)02095-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

For the first time, Bi2Se3 thin films were elaborated by metalorganic chemical vapour deposition (MOCVD) using trimethylbismuth (TMBi) and diethylselenium (DESe) as metalorganic sources. The MOCVD elaboration of Bi2Se3 was carried out in a horizontal reactor for a substrate temperature (T-g) varying from 450degreesC to 500degreesC, a total hydrogen flow rate D-T = 31 min(-1), R-VI/V ratio > 14 and TMBi partial pressure lower than 1.10(-4) atm. By X-ray diffraction and SEM observation, we noticed the polycrystalline structure of the layers typical preferential c-orientation and confirm the hexagonal structure. The microprobe data indicate that the best stoichiometry of Bi2Se3 was achieved. These films always displayed n-type conduction, and the maximum value of thermoelectric power alpha was found to be close to - 120 muV/K. (C) 2002 Published by Elsevier Science B.V.

引用

页码：217 / 220

页数：4

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