Raman line profile in polycrystalline silicon

被引：26

作者：

Pivac, B

Furic, K

Desnica, D

Borghesi, A

Sassella, A

机构：

[1] Rudjer Boskovic Inst, HR-10000 Zagreb, Croatia

[2] Univ Milano Bicocca, INFM, I-20125 Milan, Italy

[3] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 08期

关键词：

D O I：

10.1063/1.371374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectroscopy is applied to the study of the structure of polycrystalline silicon films. The analysis of the transversal optical phonon Raman line shows its complex structure consisting of two dominant contributions, centered at about 519 and 517 cm(-1) and attributed to two dominant groups of grains with different size. The profile of this Raman line is demonstrated to give deeper information about the film morphology, directly influenced by the deposition temperature in terms of the ratio of amorphous to crystalline phases, as well as the grain-size distribution, and the film stress. (C) 1999 American Institute of Physics. [S0021-8979(99)00619-2].

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页码：4383 / 4386

页数：4

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